Modeling and design techniques for RF power amplifiers / (Record no. 42382)

000 -LEADER
fixed length control field 07174nam a2200925 i 4500
001 - CONTROL NUMBER
control field 6129684
003 - CONTROL NUMBER IDENTIFIER
control field IEEE
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20191218152122.0
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS
fixed length control field m o d
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr |n|||||||||
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 070702t20152008njua ob 001 0 eng
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9780470228319
Qualifying information electronic
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 9780471717461
Qualifying information print
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 0470228318
Qualifying information electronic
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 9780470228302
Qualifying information electronic
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 047022830X
Qualifying information electronic
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1002/9780470228319
Source of number or code doi
035 ## - SYSTEM CONTROL NUMBER
System control number (CaBNVSL)mat06129684
035 ## - SYSTEM CONTROL NUMBER
System control number (IDAMS)0b0000648173e9cb
040 ## - CATALOGING SOURCE
Original cataloging agency CaBNVSL
Language of cataloging eng
Description conventions rda
Transcribing agency CaBNVSL
Modifying agency CaBNVSL
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TK7871.58.P6
Item number R34 2008eb
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.384/12
Edition number 22
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Raghavan, Arvind,
Relator term author.
245 10 - TITLE STATEMENT
Title Modeling and design techniques for RF power amplifiers /
Statement of responsibility, etc. Arvind Raghavan, Nuttapong Srirattana, Joy Laskar.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture Hoboken, New Jersey :
Name of producer, publisher, distributor, manufacturer Wiley-Interscience,
Date of production, publication, distribution, manufacture, or copyright notice c2008.
264 #2 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture [Piscataqay, New Jersey] :
Name of producer, publisher, distributor, manufacturer IEEE Xplore,
Date of production, publication, distribution, manufacture, or copyright notice [2007]
300 ## - PHYSICAL DESCRIPTION
Extent 1 PDF (xi, 206 pages) :
Other physical details illustrations.
336 ## - CONTENT TYPE
Content type term text
Source rdacontent
337 ## - MEDIA TYPE
Media type term electronic
Source isbdmedia
338 ## - CARRIER TYPE
Carrier type term online resource
Source rdacarrier
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc. note Includes bibliographical references and index.
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note PREFACE ix -- 1 INTRODUCTION 1 -- 1.1 Semiconductor Technology and RF Power Amplifier Design 2 -- 1.2 Device Modeling 3 -- 1.3 Power Amplifier IC Design 4 -- 1.4 Power Amplifier Linearity 5 -- 1.5 Modulation Schemes 5 -- 1.6 Circuit Simulation 9 -- 1.7 Load-Pull Measurements 10 -- References 13 -- 2 DEVICE MODELING FOR CAD 15 -- 2.1 Introduction 15 -- 2.2 Bipolar Junction and Weterojunction Bipolar Transistors 16 -- 2.3 Bipolar Device Models 18 -- 2.3.1 The Ebers-Moll Model 18 -- 2.3.2 The Gummel-Poon Model 20 -- 2.3.3 The VBlC Model 25 -- 2.3.4 MEXTRAM 29 -- 2.3.5 HICUM 32 -- 2.4 MOSFET Device Physics 35 -- 2.5 MOSFET Device Models 38 -- 2.5.1 The Level 1 Model 38 -- 2.5.2 The Level 2 and Level 3 Models 40 -- 2.5.3 BSlM 40 -- 2.5.4 The BSIM2 and HSPICE Level 28 Models 43 -- 2.5.5 BSIM3 44 -- 2.5.6 MOS Model 9 and MOS Model 11 45 -- 2.5.7 BSIM4 45 -- References 46 -- 3 EMPIRICAL MODELING OF BIPOLAR DEVICES 49 -- 3.1 Introduction 49 -- 3.1.1 Modeling the HBT versus the BJT 49 -- 3.1.2 Parameter Extraction 50 -- 3.1.3 Motivation for an Empirical Bipolar Device Model 51 -- 3.1.4 Physics-Based and Empirical Models 53 -- 3.1.5 Compatibility between Large- and Small-Signal Models 53 -- 3.2 Model Construction and Parameter Extraction 54 -- 3.2.1 Current Source Model 54 -- 3.2.2 Current Source Model Parameter Extraction 56 -- 3.2.3 Extraction of Intrinsic Capacitances 58 -- 3.2.4 Extraction of Base Resistance 60 -- 3.2.5 Parameter Extraction Procedure 61 -- 3.3 Temperature-Dependent InGaP/GaAs HBT Large-Signal Model 63 -- 3.4 Empirical Si BJT Large-Signal Model 71 -- 3.5 Extension of the Empirical Modeling Method to the SiGe HBT 77 -- 3.6 Summary 83 -- References 83 -- 4 SCALABLE MODELING OF RF MOSFETS 87 -- 4.1 Introduction 87 -- 4.1.1 NQS Effects 88 -- 4.1.2 Distributed Gate Resistance 89 -- 4.1.3 Distributed Substrate Resistance 89 -- 4.2 Scalable Modified BSIM3v3 Model 91 -- 4.2.1 Scalability of MOSFET Model 91 -- 4.2.2 Extraction of Small-Signal Model Parameters 94 -- 4.2.3 Scalable Substrate Network Modeling 101.
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 4.2.4 Modified BSIM3v3 Model 116 -- 4.3 Summary 120 -- References 120 -- 5 POWER AMPLIFIEIR IC DESIGN 123 -- 5.1 Introduction 123 -- 5.2 Power Amplifier Design Methodology 124 -- 5.3 Classes of Operation 125 -- 5.4 Performance Metrics 132 -- 5.5 Thermal Instability and Ballasting 136 -- References 138 -- 6 POWER AMPLIFIER DESIGN IN SILICON 141 -- 6.1 Introduction 141 -- 6.2 A 2.4-GHz High-Efficiency SiGe HBT Power Amplifier 142 -- 6.2.1 Circuit Design Considerations 143 -- 6.2.2 Analysis of Ballasting for SiGe HBT Power Amplifiers 146 -- 6.2.3 Harmonic Suppression Filter and Output Match Network 148 -- 6.2.4 Performance of the Power Amplifier Module 150 -- 6.3 RF Power Amplifier Design Using Device Periphery Adjustment 153 -- 6.3.1 Analysis of the Device Periphery Adjustment Technique 155 -- 6.3.2 1.9-GHz CMOS Power Amplifier 157 -- 6.3.3 1.9-GHz CDMA/PCS SiGe HBT Power Amplifier 162 -- 6.3.4 Nonlinear Term Cancellation for Linearity Improvement 166 -- References 169 -- 7 EFFICIENCY ENHANCEMENT OF RF POWER AMPLIFIERS 173 -- 7.1 Introduction 173 -- 7.2 Efficiency Enhancement Techniques 174 -- 7.2.1 Envelope Elimination and Restoration 174 -- 7.2.2 Bias Adaptation 175 -- 7.2.3 The Doherty Amplifier Technique 175 -- 7.2.4 Chireix's Outphasing Amplifier Technique 176 -- 7.3 The Classical Doherty Amplifier 179 -- 7.4 The Multistage Doherty Amplifier 181 -- 7.4.1 Principle of Operation 181 -- 7.4.2 Analysis of Efficiency 186 -- 7.4.3 Practical Considerations 188 -- 7.4.4 Measurement Results 190 -- References 198 -- INDEX 199.
506 1# - RESTRICTIONS ON ACCESS NOTE
Terms governing access Restricted to subscribers or individual electronic text purchasers.
520 ## - SUMMARY, ETC.
Summary, etc. The book covers RF power amplifier design, from device and modeling considerations to advanced circuit design architectures and techniques. It focuses on recent developments and advanced topics in this area, including numerous practical designs to back the theoretical considerations. It presents the challenges in designing power amplifiers in silicon and helps the reader improve the efficiency of linear power amplifiers, and design more accurate compact device models, with faster extraction routines, to create cost effective and reliable circuits.
530 ## - ADDITIONAL PHYSICAL FORM AVAILABLE NOTE
Additional physical form available note Also available in print.
538 ## - SYSTEM DETAILS NOTE
System details note Mode of access: World Wide Web
550 ## - ISSUING BODY NOTE
Issuing body note Made available online by Ebrary.
588 ## - SOURCE OF DESCRIPTION NOTE
Source of description note Description based on PDF viewed 12/21/2015.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Power amplifiers
General subdivision Design and construction.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Amplifiers, Radio frequency.
655 #0 - INDEX TERM--GENRE/FORM
Genre/form data or focus term Electronic books.
695 ## -
-- Analytical models
695 ## -
-- Computational modeling
695 ## -
-- Current measurement
695 ## -
-- Heterojunction bipolar transistors
695 ## -
-- Immune system
695 ## -
-- Indexes
695 ## -
-- Inductance
695 ## -
-- Integrated circuit modeling
695 ## -
-- Linearity
695 ## -
-- Logic gates
695 ## -
-- MOSFETs
695 ## -
-- Mathematical model
695 ## -
-- Mobile communication
695 ## -
-- Modulation
695 ## -
-- Multiaccess communication
695 ## -
-- Numerical models
695 ## -
-- Parameter extraction
695 ## -
-- Power amplifiers
695 ## -
-- Power generation
695 ## -
-- Power harmonic filters
695 ## -
-- Radio frequency
695 ## -
-- Resistance
695 ## -
-- Semiconductor device modeling
695 ## -
-- Silicon
695 ## -
-- Silicon germanium
695 ## -
-- Solid modeling
695 ## -
-- Substrates
695 ## -
-- Transistors
695 ## -
-- Wireless communication
695 ## -
-- Wires
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Laskar, Joy.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Srirattana, Nuttapong.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element IEEE Xplore (Online Service),
Relator term distributor.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element John Wiley & Sons,
Relator term publisher.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element ebrary, Inc.
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Print version:
International Standard Book Number 9780471717461
856 42 - ELECTRONIC LOCATION AND ACCESS
Materials specified Abstract with links to resource
Uniform Resource Identifier https://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=6129684

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