Terrestrial neutron induced soft errors in advanced memory devices
By: Nakamura, T. et.al.
Material type: BookPublisher: New Jersey World Scientific 2008Description: xxii, 343p.ISBN: 978-9-812-77881-9.Item type | Current location | Call number | Status | Date due | Barcode |
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621.3973205392 NAK (Browse shelf) | Available | 508696 |
Browsing International Institute of Information Technology Bangalore Shelves Close shelf browser
621.39732 RAZ Design of analog CMOS integrated circuits | 621.39732 SCH CMOS analog design using all-region MOSFET modeling | 621.39732 WON Nano-CMOS circuit and physical design | 621.3973205392 NAK Terrestrial neutron induced soft errors in advanced memory devices | 621.39732072 BAS To the digital age: Research labs, start-up companies, and the rise of MOS technology | 621.3976 HEN Multi-application Smart Cards: Technology and Applications | 621.3976 HEN Multi-application Smart Cards: Technology and Applications |
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