000			06287nam a2201201 i 4500
001			5237928
003			IEEE
005			20191218152114.0
006			m o d
007			cr |n|||||||||
008			151221s2006 njua ob 001 eng d
020			_a9780471749097 _qelectronic
020			_z9780471739067 _qprint
020			_z0471749095 _qelectronic
024	7		_a10.1002/0471749095 _2doi
035			_a(CaBNVSL)mat05237928
035			_a(IDAMS)0b00006481095e09
040			_aCaBNVSL _beng _erda _cCaBNVSL _dCaBNVSL
050		4	_aQC611 _b.S335 2006eb
082	0	4	_a621.3815/2 _222
100	1		_aSchroder, Dieter K., _eauthor.
245	1	0	_aSemiconductor material and device characterization / _cDieter K. Schroder.
250			_a3rd ed.
264		1	_a[Piscataway, New Jersey] : _bIEEE Press, _cc2006.
264		2	_a[Piscataqay, New Jersey] : _bIEEE Xplore, _c[2006]
300			_a1 PDF (xv, 779 pages) : _billustrations.
336			_atext _2rdacontent
337			_aelectronic _2isbdmedia
338			_aonline resource _2rdacarrier
504			_aIncludes bibliographical references and index.
505	0		_aResistivity -- Carrier and doping density -- Contact resistance and Schottky barriers -- Series resistance, channel length and width, and threshold voltage -- Defects -- Oxide and interface trapped charges, oxide thickness -- Carrier lifetimes -- Mobility -- Charge-based and probe characterization -- Optical characterization -- Chemical and physical characterization -- Reliability and failure analysis.
506	1		_aRestricted to subscribers or individual electronic text purchasers.
520			_aThis Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: . Updated and revised figures and examples reflecting the most current data and information. 260 new references offering access to the latest research and discussions in specialized topics. New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: . Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
530			_aAlso available in print.
538			_aMode of access: World Wide Web
588			_aDescription based on PDF viewed 12/21/2015.
650		0	_aSemiconductors.
650		0	_aSemiconductors _xTesting.
655		0	_aElectronic books.
695			_aAcceleration
695			_aAdaptive optics
695			_aBismuth
695			_aCapacitance
695			_aCapacitance-voltage characteristics
695			_aCathode ray tubes
695			_aCharge carrier density
695			_aCharge carrier processes
695			_aCharge measurement
695			_aConductivity
695			_aContact resistance
695			_aContamination
695			_aCurrent measurement
695			_aDensity measurement
695			_aDoping
695			_aElectric potential
695			_aElectron beams
695			_aElectron emission
695			_aElectron traps
695			_aEquations
695			_aHall effect
695			_aImage resolution
695			_aImpurities
695			_aIndexes
695			_aJunctions
695			_aKelvin
695			_aLifetime estimation
695			_aLogic gates
695			_aMagnetic semiconductors
695			_aMaterials
695			_aMetals
695			_aMicroscopy
695			_aOhmic contacts
695			_aOptical imaging
695			_aOptical microscopy
695			_aOptical polarization
695			_aOptical reflection
695			_aOxidation
695			_aPhotonic band gap
695			_aPollution measurement
695			_aProbes
695			_aRadiative recombination
695			_aReliability
695			_aResistance
695			_aScanning electron microscopy
695			_aScattering
695			_aSchottky diodes
695			_aSemiconductor device measurement
695			_aSilicon
695			_aStress
695			_aSurface treatment
695			_aSymbols
695			_aTemperature measurement
695			_aTerminology
695			_aThermionic emission
695			_aThreshold voltage
695			_aTransmission electron microscopy
695			_aTunneling
695			_aVoltage measurement
710	2		_aJohn Wiley & Sons, _epublisher.
710	2		_aIEEE Xplore (Online service), _edistributor.
776	0	8	_iPrint version: _z9780471739067
856	4	2	_3Abstract with links to resource _uhttps://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5237928
999			_c41962 _d41962